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PRODID:UW-Physics-TWaP
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UID:UW-Physics-Event-2715
DTSTART:20120912T100000
DURATION:PT1H0M0S
LOCATION:5310 Chamberlin
SUMMARY:How strain unintentionally causes quantum dots in silicon nano-devices\, R. G. Herb Condensed Matter Seminar\, Ted Thorbeck\, National Institute of Standards and Technology
DESCRIPTION:Silicon quantum dots are useful both in making a quantum computer and in charge pumps for electrical standards.  A common problem in the Si-SiO<sub>2</sub> quantum dot community is that in addition to the electrostatically defined dots we get additional\, unintentional dots. In this talk I will discuss how we have been able to determine the location of these unintentional dots within our devices with a precision of a few nanometers.  I will then discuss how strain from the gates and the oxide causes unintentional dots in our devices\, as well as for other groups working on Si-SiO<sub>2</sub> quantum dots.  This allows me to recommend methods to reduce the strain\, thereby reducing the number of unintentional dots.
URL:http://www.physics.wisc.edu/twap/view.php?id=2715
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