Point defects in crystals are the solid-state analog to trapped ions. Thus these “quantum defects”, which can be integrated into solid-state devices, have gained interest as quantum sensors and qubit candidates for scalable quantum networks. In this talk, I will introduce some of the basic quantum defect properties desirable for quantum technologies. I will highlight my own group’s efforts at understanding and controlling the properties of defects in diamond including (1) synthesis, frequency and emission control of deep-level vacancy complexes in diamond and (2) properties of shallow-level donors in ZnO, including single donors and intentionally synthesized donors in ZnO.

This event starts at 3:30pm with refreshments, followed at 3:45pm by a short presentation titled "Atom-by-atom engineering of impurity energy levels on semiconductor surfaces", by Keenan Smith (Brar group). The invited presentation starts at 4pm.