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VERSION:2.0
CALSCALE:GREGORIAN
PRODID:UW-Madison-Physics-Events
BEGIN:VEVENT
SEQUENCE:0
UID:UW-Physics-Event-1639
DTSTART:20091203T160000Z
DURATION:PT1H0M0S
DTSTAMP:20260421T152056Z
LAST-MODIFIED:20091130T140644Z
LOCATION:5310 Chamberlin
SUMMARY:Recent Experiments to Probe Individual Spins of Few-Electron S
 ilicon Quantum Dots\, R. G. Herb Condensed Matter Seminar\, HongWen Ji
 ang\, UCLA
DESCRIPTION:It is becoming increasingly apparent that qubits based on 
 individual electron spins in Si quantum dots have considerable potenti
 al for scalable quantum information processing. Complementary to the a
 ctive research efforts at Wisconsin\, we at UCLA have developed a diff
 erent type of electrostatically-confined quantum dots on Si MOS based 
 materials.  An array of electrical characterization shows that the qua
 ntum dots have unprecedented device stability and controllability.  In
  this talk\, I present results of transport measurements in the few el
 ectron regime.  Unusual spin filling configurations\, along with non-l
 inear transport features associated with high-spin states will be repo
 rted.  An integrated charge sensing channel adjacent to the quantum do
 t has been used to study the individual electron tunneling events and 
 relaxation dynamics.  The electron spin relaxation time T1 in the pres
 ence of an in-plane magnetic field is measured by the charge sensor wi
 th a pump-and-probe technique. I will discuss mechanisms leading to sp
 in relaxation in this type of Si device.
URL:https://www.physics.wisc.edu/events/?id=1639
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