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VERSION:2.0
CALSCALE:GREGORIAN
PRODID:UW-Madison-Physics-Events
BEGIN:VEVENT
SEQUENCE:0
UID:UW-Physics-Event-1714
DTSTART:20100114T160000Z
DURATION:PT1H0M0S
DTSTAMP:20260422T131635Z
LAST-MODIFIED:20100113T133801Z
LOCATION:5310 Chamberlin
SUMMARY:Charge sensing and excited state spectroscopy in a Si/SiGe qua
 ntum dot\, R. G. Herb Condensed Matter Seminar\, Madhu Thalakulam\, UW
 -Madison
DESCRIPTION:Charge sensing with integrated point contacts is an essent
 ial component to the development of Si-based quantum dot spin qubits. 
  Recently\, we have shown that such charge sensing can be used to perf
 orm excited state spectroscopy in two complementary ways. In the first
  approach\, pulsed gate voltages of increasing amplitude are applied t
 o a gate.  In the second approach\, a non-zero dc source-drain bias is
  applied across the quantum dot.  In neither case does measurable curr
 ent flow through the dot.  Instead\, in both approaches excited states
  appear as sharp changes in time-averaged charge-sensing measurements 
 performed with the integrated quantum point contact.  The advantage of
  this approach is that it enables spectroscopy of quantum states when 
 no transport is possible through the dot\, which is a common situation
  for quantum dots in the one-electron limit.  I will also present data
  demonstrating a Si/SiGe double quantum dot with exactly one-electron 
 in each dot.
URL:https://www.physics.wisc.edu/events/?id=1714
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