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VERSION:2.0
CALSCALE:GREGORIAN
PRODID:UW-Madison-Physics-Events
BEGIN:VEVENT
SEQUENCE:0
UID:UW-Physics-Event-2715
DTSTART:20120912T150000Z
DURATION:PT1H0M0S
DTSTAMP:20260414T120837Z
LAST-MODIFIED:20120907T125121Z
LOCATION:5310 Chamberlin
SUMMARY:How strain unintentionally causes quantum dots in silicon nano
 -devices\, R. G. Herb Condensed Matter Seminar\, Ted Thorbeck\, Nation
 al Institute of Standards and Technology
DESCRIPTION:Silicon quantum dots are useful both in making a quantum c
 omputer and in charge pumps for electrical standards.  A common proble
 m in the Si-SiO<sub>2</sub> quantum dot community is that in addition 
 to the electrostatically defined dots we get additional\, unintentiona
 l dots. In this talk I will discuss how we have been able to determine
  the location of these unintentional dots within our devices with a pr
 ecision of a few nanometers.  I will then discuss how strain from the 
 gates and the oxide causes unintentional dots in our devices\, as well
  as for other groups working on Si-SiO<sub>2</sub> quantum dots.  This
  allows me to recommend methods to reduce the strain\, thereby reducin
 g the number of unintentional dots.
URL:https://www.physics.wisc.edu/events/?id=2715
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