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UID:UW-Physics-Event-4174
DTSTART:20160826T150000Z
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DTSTAMP:20260315T025215Z
LAST-MODIFIED:20161014T113452Z
LOCATION:5310 Chamberlin
SUMMARY:Atomic and nanoscale donor devices in silicon: Progress toward
 s fabrication and characterisation\, R. G. Herb Condensed Matter Semin
 ar\, Dr. Neil Curson \, University College London
DESCRIPTION:Donors in silicon are seen as good candidates for quantum 
 information processing (QIP) applications due to the long spin lifetim
 es of their valance electrons and nuclei. I will report on our progres
 s towards fabrication and characterisation of atomic and nanoscale dev
 ices based on donors in silicon. We have identified the precise atomic
  positions of buried neutral arsenic (As) donors below a hydrogen-pass
 ivated silicon surface using a combination of scanning tunnelling micr
 oscopy (STM) and density functional theory (DFT) studies [1\,2]. We ha
 ve also used scanning microwave microscopy (SMM) to image and electron
 ically characterize patterned phosphorus nanostructures fabricated via
  scanning tunneling microscope-based lithography. The SMM measurements
 \, which are completely non-destructive and sensitive to as few as 700
 0 sub-surface P atoms\, yield electrical and geometric properties in a
 greement with those obtained from electrical transport and secondary i
 on mass spectroscopy (SIMS) for un-patterned phosphorus δ-layers. The
  ability to determine depth and electrical characteristics of buried P
  nanostructures leads the way towards 3D imaging of nanoscale electric
 al devices.<br><br>
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\n <br><br>
\n<br><br>
\n[1] K. Sinthip
 tharakoon et al.\, J. Phys. Condens. Matter. 26\, 012001 (2014).<br><b
 r>
\n<br><br>
\n[2] V. Brazdova et al.\,  arXiv:1512.04377
URL:https://www.physics.wisc.edu/events/?id=4174
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