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VERSION:2.0
CALSCALE:GREGORIAN
PRODID:UW-Madison-Physics-Events
BEGIN:VEVENT
SEQUENCE:2
UID:UW-Physics-Event-9723
DTSTART:20260708T180000Z
DTEND:20260708T200000Z
DTSTAMP:20260713T204113Z
LAST-MODIFIED:20260703T211100Z
LOCATION:Chamberlin 5310 or https://uwmadison.zoom.us/j/97411039468?pw
 d=TGiIx7N2bj4TWW4HpE3h7E9e8i64on.1
SUMMARY:Heterostructure modifications and strain engineering for valle
 y splitting enhancement in Si/SiGe quantum dots for quantum computatio
 n\, Thesis Defense\, Emily Joseph
DESCRIPTION:Quantum dots hosted in Si/SiGe heterostructures are an att
 ractive platform for quantum computation. However\, the presence of va
 lley states in Si/SiGe quantum dots can lead to small and highly varia
 ble valley splittings. Achieving consistently large valley splittings 
 is essential for scaling silicon quantum dot qubit arrays\, where low 
 valley splitting can lead to leakage and control errors. Shear strain 
 in a Si/SiGe heterostructure hosting a Wiggle Well has been predicted 
 to yield deterministically large valley splittings. This work presents
  simulations of Si/SiGe heterostructures designed to enhance valley co
 upling through engineered strain. Stressed thin films deposited above 
 realistic quantum-dot gate architectures are shown to generate more th
 an 0.15% shear strain in silicon quantum wells located 40 nm below the
  surface. When combined with a Wiggle Well heterostructure\, this stra
 in is predicted to increase the deterministic component of the valley 
 splitting beyond 200 μeV. Simulations of realistic device architectur
 es establish practical design rules for integrating stressors with sca
 lable silicon quantum-dot devices\, providing a pathway toward higher-
 fidelity silicon spin qubits.
URL:https://www.physics.wisc.edu/events/?id=9723
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