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PRODID:UW-Madison-Physics-Events
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SEQUENCE:2
UID:UW-Physics-Event-9725
DTSTART:20260709T160000Z
DTEND:20260709T180000Z
DTSTAMP:20260719T220314Z
LAST-MODIFIED:20260709T151707Z
LOCATION:B343 Sterling or https://us05web.zoom.us/j/3591398554?pwd=czg
 2elBXOUVOL0NnS0hEYUpQM3RXZz09
SUMMARY:Tunability of Si/SiGe Quantum Dot Qubit Devices \, Thesis Defe
 nse\, Sanghyeok Park
DESCRIPTION:Gate-defined quantum dots in Si/SiGe heterostructures are 
 a promising platform for spin-based quantum computing because many dev
 ice parameters can be tuned after fabrication. This tunability gives t
 he platform its flexibility but also makes devices hard to operate rep
 roducibly as they grow. This dissertation uses tunability deliberately
  in two ways. First\, dynamically pulsing a single barrier gate resolv
 es the conflicting tunnel rate requirements of latched readout\, enabl
 ing single-shot readout of a quantum dot hybrid qubit with a signal-to
 -noise ratio of 10.2 and a factor of 15 faster reset. Second\, gate-bi
 ased illumination reshapes the electrostatic environment\, shifting a 
 triple quantum dot into a low-voltage regime with a factor of three im
 provement in voltage uniformity and no measured increase in charge noi
 se. Together these results show how the same gate control that complic
 ates Si/SiGe quantum dots can be used to bring nonuniform devices into
  a range compatible with compact\, scalable control electronics.
URL:https://www.physics.wisc.edu/events/?id=9725
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