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R. G. Herb Condensed Matter Seminar
Epitaxial Growth of Isotopically Enhanced SiGe Quantum Dots
Date: Thursday, October 11th
Time: 10:00 am
Place: 5310 Chamberlin
Speaker: Dr. Lisa Edge, HRL
Abstract: This presentation will cover the epitaxial growth and materials characterization of isotopically enhanced SiGe quantum dots by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Materials characterization of these advanced SiGe quantum dot structures by AFM, APT, HRTEM, XRR, and XRD will be discussed.
Host: Friesen
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