Abstract: Quantum dots hosted in Si/SiGe heterostructures are an attractive platform for quantum computation. However, the presence of valley states in Si/SiGe quantum dots can lead to small and highly variable valley splittings. Achieving consistently large valley splittings is essential for scaling silicon quantum dot qubit arrays, where low valley splitting can lead to leakage and control errors. Shear strain in a Si/SiGe heterostructure hosting a Wiggle Well has been predicted to yield deterministically large valley splittings. This work presents simulations of Si/SiGe heterostructures designed to enhance valley coupling through engineered strain. Stressed thin films deposited above realistic quantum-dot gate architectures are shown to generate more than 0.15% shear strain in silicon quantum wells located 40 nm below the surface. When combined with a Wiggle Well heterostructure, this strain is predicted to increase the deterministic component of the valley splitting beyond 200 μeV. Simulations of realistic device architectures establish practical design rules for integrating stressors with scalable silicon quantum-dot devices, providing a pathway toward higher-fidelity silicon spin qubits.